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Nanoscale science department

 

 


 

 

PublicationsPublicationsPublicationsPublications

 

 

Publications 2002-2003

 

  • J.A. Misewich, R. Martel, Ph. Avouris, J.C. Tsang, S. Heinze, J. Tersoff, Electrically Induced Optical Emission from Carbon Nanotube FET, Science 300, 783-786 (2003).

 

  • N.D. Lang, Ph. Avouris, Understanding the Variation of the Electrostatic Potential along a Biased Molecular Wire, Nano Letters 3, 737 (2003).

 

  • X. Cui, M. Freitag, R. Martel, L. Brus, Ph. Avouris, Controlling Energy-Level Alignments at Carbon Nanotube/Au Contacts, Nano Letters 3, 783 (2003).

 

  • H.-S. P. Wong, J. Appenzeller, V. Derycke, R. Martel, S. Wind, Ph. Avouris, Carbon nanotube field effect transistors – fabrication, device physics, and circuit implications, ISSCC Technical Digest, 370 (2003).

 

  • M. Freitag, Y. Martin, J.A. Misewich, R. Martel, Ph. Avouris, Photoconductivity of single carbon nanotubes, Nano Lett. 3, 1067-1071 (2003).

 

  • X. Cui, M. Freitag, R. Martel, L. Brus, Ph. Avouris, Controlling energy-level alignments at carbon nanotube/Au contacts, Nano Lett. 3, 783-787 (2003).

 

  • N.D. Lang, Ph. Avouris, Understanding the variation of the electrostatic potential along a biased molecular wire, Nano Lett. 3, 737-740 (2003).

 

  • M. Radosavljevic, J. Appenzeler, R. Martel, Ph. Avouris, A. Loiseau, J.L. Cochon, D. Pigache, Electrical properties and transport in boron nitride nanotubes, Appl. Phys. Lett. 82, 4131 (2003).

 

  • Ph. Avouris, J. Appenzeller, R. Martel, S.J. Wind, Carbon nanotube electronics, Special issue of the Proceedings of IEEE  91, 1772-1784 (2003). Invited paper.

 

  • M. Radosavljevic, S. Heinze, J. Tersoff and Ph. Avouris, Drain voltage scaling in nanotube transistors, Appl. Phys. Lett. 83, 2435 (2003).

 

  • S. Wind, J. Appenzeller, Ph. Avouris, Lateral scaling in carbon nanotube field-effect transistors, Phys. Rev. Lett. 91, 058301 (2003).

 

  • S. Heinze, J. Tersoff, Ph. Avouris, Electrostatic engineering of nanotube transistors for improved performance, Appl. Phys. Lett., 83, 5038 (2003).

 

  • S. Heinze, M. Radosavljevic, J. Tersoff, Ph. Avouris, Unexpected scaling performance of carbon nanotube transistors, Phys. Rev. B 68, 235418 (2003).

 

  • J. Appenzeller, R. Radosavljevic, J. Knoch, Ph. Avouris, Tunneling vs. thermionic emission in one-dimensional semiconductors, Phys. Rev. Lett. 92, 048301 (2003).

 

  • M. A. Arnold, Ph. Avouris, Z. W. Pan, Z. L. Wang, Field effect transistors based on a single semiconducting oxide nanobeltJ. Phys. Chem. B 107, 659 (2003).

 

  • S.J. Wind, R. Martel, Ph. Avouris, Localized and directed lateral growth of carbon nanotubes from a porous template, J. Vac. Sci. Technol. B 20, 2745 (2003).

 

  • S.J. Wind, M. Radosavljevic, J. Appenzeller, Ph. Avouris, Transistor structures for the study of electron transport in carbon nanotubes, J. Vac. Sci. Technol. B, 21, 2856 (2003).

 

  • M. Radosavljevic, S. Heinze, J. Tersoff, Ph. Avouris, Thermal carrier injection into ambipolar carbon nanotube field effect transistors, Proc. Intl. Winter School on Electronic Properties of Novel Materials, AIP Conference Proceedings #685, 519-523 (2003).

 

  • J. Appenzeller, J. Knoch, Ph. Avouris, Carbon nanotube field-effect transistors – an example of an ultra-thin body Schottky barrier device, 61st Device Research Conference, ISBN: 0-7803-7727-3, pp. 167-170 (2003).

 

  • S. J. Wind, J. Appenzeller, R. Martel, M. Radosavljevic, S. Heinze, Ph. Avouris, Carbon nanotube devices for future electronics, IEEE Nano 1, 236-239 (2003).

 

  • P.G. Collins, Ph. Avouris, Distinguishing among noise mechanisms in multiwalled carbon nanotube conductors, Proceedings of ICNF (2003).

 

  • J. Appenzeller, J. Knoch, R. Martel, V. Derycke, S. Wind, Ph.Avouris, Short channel like effects in Schottky barrier carbon nanotube field effect transistors, IEEE Tech. Dig, 02CH37358 (2002).

 

  • Ph. Avouris, Carbon nanotube electronics, Chem. Phys., 281, 429 (2002).

 

  • J. Appenzeller, R. Koch, R. Martel, V. Derycke, S. Wind, and Ph. Avouris, Field-modulated carrier transport in carbon nanotube transistors, Phys. Rev. Lett. 89, 1 (2002).

 

  • R. Martel, V. Derycke, J. Appenzeller, S. Wind and Ph.Avouris, Carbon Nanotube field effect transistors and logic circuits, ACM, 94, (2002).

 

  • V. Derycke, R. Martel, J. Appenzeller and Ph. Avouris, Controlling doping and carrier injection in Carbon Nanotube transistors, Appl. Phys. Letters 80, 2773 (2002).

 

  • S. Wind, J. Appenzeller, R. Martel, V. Derycke and Ph. Avouris, Vertical scaling of Carbon Nanotube field-effect transistors using top gate electrodes, Appl. Phys. Letters  80, 3817 (2002).

 

  • Rochefort, R. Martel, and Ph. Avouris, Electrical switching in P-resonant 1D intermolecular channels, Nano Letters 2, 877 (2002).

 

  • J. Appenzeller, R. Martel, V. Derycke, M. Radosavljevic, S. Wind, D. Neumayer, Ph.  Avouris, Carbon Nanotubes as potential building blocks for future nanoelectronics, Microceletronics Engineering 64, 391 (2002).

 

  • S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, Carbon Nanotubes as Schottky barrier transistors, Nano Letters 2 1047 (2002).

 

  • K. Liu, Ph. Avouris, J. Bucchignano, R. Martel, and S. Sun, A simple fabrication scheme for sub-10nm electrode gaps using e-beam lithography, Appl. Phys. Letters80, 865 (2002).

 

  • J. Appenzeller, R. Martel, Ph Avouris, J. Knoch, J.A. del Alamo, P. Rice and P. Solomon, Sub 40 nm SOI V groove n MOSFETs, IEEE Electron Dev. Letters,  23 100 (2002).

 

  • P. G. Collins and Ph. Avouris, Multi-shell conduction in multi-walled Carbon Nanotubes, Appl. Phys. A 74, 329 (2002).

 

  • N. D. Lang and Ph. Avouris, Effects of co-adsorption on the conductance of molecular wires, Appl. Phys. Lett. 80, 2773 (2002).

 

  • V. Derycke, R. Martel, M. Radosavljevic, F.M. Ross, Ph. Avouris, Catalyst free growth of ordered single walled Carbon Nanotube networks, Nano Letters 2, 1043 (2002).

 

  • S.J. Wind, J. Appenzeller, R. Martel, V. Derycke, Ph. Avouris, Fabrication and electrical characterization of top gate single wall Carbon Nanotube field effect transistors, Journal of Vacuum. Science & Technology B 20, 2798 (2002).

 

  • S.J. Wind, R. Martel, Ph. Avouris, Localized and directed lateral growth of Carbon Nanotubes from a porous template, Journal of Vacuum. Science & Technology B 20, 2745 (2002).

 

  • J. Appenzeller, J. Knoch, R. Martel, V. Derycke, S.J. Wind, Ph. Avouris, Carbon Nanotube electronics, IEEE Trans NanoTechnology, 1, 184 (2002).

 

  • J. A. Steckel, K. D. Jordan, and Ph. Avouris, Oxygen atom reactions with circumtrindene and related molecules: Analogues for oxidation of Nanotube caps, J. Phys. Chem. B 106, 2572 (2002).

 

  • V. Derycke, R. Martel, M. Radosavljevic, and Ph. Avouris, Highly oriented catalyst-free synthesis of single-walled Carbon Nanotubes, Nano Letters 2, 1043-6 (2002).

 

  • Ph. Avouris, Molecular Electronics with Carbon Nanotubes, Acc. Chem. Res35, 1026 (2002). (invited article)

 

 

 


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